Investigation on the role of oxygen in μc-Si:H thin film and its deposition process with VHF-PECVD

Author

Yang, Huidong ; Wu, Chunya ; Mai, Yaohua ; Li, Hongbo ; Li, Yan ; Geng, Xinhua ; Zhao, Ying ; Xiong, Shaozhen

Author_Institution

Inst. of Photoelectron., Nankai Univ., Tianjin, China

fYear

2002

fDate

19-24 May 2002

Firstpage

1262

Lastpage

1265

Abstract

Investigations on the role of oxygen in μc-Si:H films deposited with and without load lock chamber by VHF-PECVD technique have been reported in this paper. From the results of in-situ optical emission spectroscopy (OES), X-ray photoelectron spectroscopy (XPS) and Fourier transformation infrared absorption (FTIR) measurements, it can be identified that oxygen existing in μc-Si:H film with different bonding modes, namely Si-O bonding, O-H bonding and O-O bonding. In addition, the influences of oxygen on the structural and electrical properties of films are studied with Raman spectra, conductivity (σ) and active energy (E_a) measurements. The results reveal the structural properties of μc-Si:H film strongly depends on the bonding modes of the existing oxygen, the electrical properties especially show that the role of oxygen in μc-Si:H films is different from those in a-Si:H and the essential mechanism needs to be further explored.

Keywords

Fourier transform spectra; Raman spectra; X-ray photoelectron spectra; bonds (chemical); electrical conductivity; elemental semiconductors; hydrogen; infrared spectra; oxygen; plasma CVD coatings; semiconductor thin films; silicon; μc-Si:H thin film; FTIR; Fourier transformation infrared absorption; Raman spectra; Si:H,O; VHF-PECVD; X-ray photoelectron spectroscopy; XPS; active energy measurements; bonding; conductivity; deposition process; optical emission spectroscopy; structure; Bonding; Conductive films; Conductivity; Electromagnetic wave absorption; Infrared spectra; Mechanical factors; Optical films; Spectroscopy; Sputtering; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2002. Conference Record of the Twenty-Ninth IEEE

ISSN

1060-8371

Print_ISBN

0-7803-7471-1

Type

conf

DOI

10.1109/PVSC.2002.1190838

Filename

1190838