Design, fabrication and characterization of monolithically integrated low power photo transceiver using most cost effective solid phase epitaxy

There is a need to develop an agile sensor technology for surveillance, detection and image processing. Such a technology should be able to detect, process and transmit near perfect optical images and related information that would adapt automatically to changing scenarios and environments. A densely packed, two dimensional array of photo transceivers is an essential element in such applications. However, unlike the requirements of conventional light wave WDM based networks, very stringent power handling and dissipation requirements have to be met. Two dimensional arrays of vertical cavity surface emitting lasers (VCSELs), operating with ultra low threshold current, large quantum efficiency, low beam divergence and very low power dissipation can be used for this application. On the other hand, microcavity light emitting diodes (MCLEDs) provide very high wall-plug efficiency, comparable to VCSELs at low current levels. The monolithic integration of high sensitivity heterojunction phototransistors (HPTs) and MCLEDs in a photo transceiver is therefore very attractive for agile sensor technologies. In this novel work, we describe the design and performance characteristics of monolithically integrated photo transceivers incorporating a micro cavity light emitting diode and phototransistor.