A SPICE Compact Model for Unipolar RRAM Reset Process Analysis

Author

Jimenez-Molinos, Francisco ; Villena, Marco A. ; Roldan, Juan B. ; Roldan, Andres M.

Author_Institution

Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada, Spain

Volume

62

Issue

3

fYear

2015

fDate

Mar-15

Firstpage

955

Lastpage

962

Abstract

A physically based circuit model is proposed for SPICE simulation of thermally assisted reset transitions in resistive switching devices. The model allows the simulation of conductive filaments with complex structures, such as a main filament with several subfilaments attached forming a tree structure, or several filaments interlaced between them. The model has been validated by comparing with experimental data and the simulations obtained with a previously published simulation tool. A study of the influence of different subfilaments configurations on the variability of resistive random access memory I-V reset curves is also presented.

Keywords

SPICE; integrated circuit modelling; resistive RAM; I-V reset curves; SPICE compact model; conductive filaments; physically based circuit model; resistive random access memory; resistive switching devices; thermally assisted reset transitions; tree structure; unipolar RRAM reset process analysis; Data models; Integrated circuit modeling; Mathematical model; Resistance; Resistance heating; SPICE; Abrupt and progressive reset; SPICE; circuital model; compact model; conductive filaments (CFs); resistive random access memory (RRAM) variability; resistive switching (RS) memory; thermal dissolution; thermal dissolution.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2387429

Filename

7024172