Title :
Oriented lithium niobate layers transferred on 4" [100] silicon wafer for RF SAW devices
Author :
Solal, M. ; Pastureaud, Th ; Ballandras, S. ; Aspar, B. ; Biasse, B. ; Daniau, W. ; Hodé, J.M. ; Calisti, S. ; Laude, V.
Abstract :
A technological process has been developed to achieve a thin oriented Lithium Niobate layer deposited on [100] Si wafers for the fabrication of SAW devices integrable on silicon. The theoretical analysis of the elastic wave assumed to propagate on such combination of material is first reported. Technological aspects are then briefly described. Finally, experimental results are presented and compared to the state of art.
Keywords :
elemental semiconductors; lithium compounds; piezoelectric materials; silicon; surface acoustic wave filters; 4 in; 4" [100] Si wafer; LiNbO3; RF SAW devices; Si; elastic wave; oriented lithium niobate layers; Fabrication; Green\´s function methods; Lithium niobate; Piezoelectric films; Propagation losses; Radio frequency; Silicon; Substrates; Surface acoustic wave devices; Surface acoustic waves;
Conference_Titel :
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
Print_ISBN :
0-7803-7582-3
DOI :
10.1109/ULTSYM.2002.1193369
