Design of SAW amplifier with distributed semiconductor transistor

Author

Aoki, Y. ; Yoshida, H. ; Koh, K. ; Kaneshiro, C. ; Hohkawa, K.

Author_Institution

Adv. Technol. Res. center, Kanagawa Inst. of Technol., Japan

Volume

1

fYear

2002

fDate

8-11 Oct. 2002

Firstpage

259

Abstract

In this paper, we present the design of a novel SAW amplifier that consists of multi-stripe tapping electrodes and a GaAs FET amplifier. Using a general circuit simulator, we analyse the frequency characteristics of the SAW amplifier. The SAW amplifier with differential operation shows wideband frequency characteristics better than that without differential operation. We also investigate the frequency characteristics by changing tapping electrode pitches and the impedance matching condition between SAW and FET. These results confirm that the SAW amplifier is applicable to wideband communication systems and signal processing systems.

Keywords

III-V semiconductors; circuit simulation; distributed amplifiers; field effect transistor circuits; gallium arsenide; impedance matching; radiofrequency amplifiers; surface acoustic wave devices; wideband amplifiers; GaAs; GaAs FET; SAW amplifier; circuit simulator; communication systems; design; differential operation; distributed semiconductor transistor; frequency characteristics; impedance matching condition; multi-stripe tapping electrodes; signal processing system; tapping electrode pitches; wideband frequency characteristics; Analytical models; Broadband amplifiers; Circuits; Distributed amplifiers; Electrodes; FETs; Frequency; Gallium arsenide; Semiconductor optical amplifiers; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE

ISSN

1051-0117

Print_ISBN

0-7803-7582-3

Type

conf

DOI

10.1109/ULTSYM.2002.1193397

Filename

1193397