Title :
Modelling of ZnO-based BAWs at high signal levels
Author :
Ellä, Juha ; Ylilammi, Markku
Abstract :
This paper proposes a method to simulate the center frequency shift in bulk acoustic wave (BAW) filters, caused by high input signal levels, which heat up the devices. The results were verified by wafer level measurements and on diced devices wire bonded to jigs. In addition the temperature distribution on diced samples was imaged with an infrared camera. The measured and calculated center frequency shifts as well as the temperature distribution in filters correlate fairly well.
Keywords :
II-VI semiconductors; acoustic filters; piezoelectric materials; piezoelectric thin films; semiconductor device models; semiconductor thin films; temperature distribution; zinc compounds; ZnO; ZnO-based BAWs; center frequency shift; center frequency shifts; diced devices; high signal levels; infrared camera; temperature distribution; wafer level measurements; wire bonded to jigs; Acoustic waves; Filters; Fixtures; Frequency; Infrared imaging; Level measurement; Semiconductor device modeling; Temperature distribution; Wafer bonding; Wire;
Conference_Titel :
Ultrasonics Symposium, 2002. Proceedings. 2002 IEEE
Print_ISBN :
0-7803-7582-3
DOI :
10.1109/ULTSYM.2002.1193561
