DocumentCode :
39508
Title :
GaAsSb-Based DHBTs With a Reduced Base Access Distance and 
503/780 GHz
Author :
Alexandrova, Maria ; Flueckiger, Ralf ; Lovblom, Rickard ; Ostinelli, Olivier ; Bolognesi, C.R.
Author_Institution :
Dept. of Inf. Technol. & Electr. Eng., ETH Zurich, Zurich, Switzerland
Volume :
35
Issue :
12
fYear :
2014
fDate :
Dec. 2014
Firstpage :
1218
Lastpage :
1220
Abstract :
We report InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with simultaneous current and power gain cutoff frequencies of fT/fMAX = 503/780 GHz. Devices with a 0.2 × 4.4 μm2 emitter area feature a peak DC current gain β = 17 and a common-emitter breakdown voltage BVCEO = 4.1 V. To the best of our knowledge, the present transistors are the first GaAsSb-based DHBTs to feature fMAX > 750 GHz. The progress in RF performance is enabled by a reduction of the base access resistance and base-collector capacitance achieved via an improved self-aligned emitter etching procedure.
Keywords :
III-V semiconductors; electric breakdown; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; submillimetre wave transistors; GaAsSb-based DHBT; InP-GaAsSb-InP; InP-GaAsSb-InP double heterojunction bipolar transistors; RF performance; base access resistance; base-collector capacitance; common-emitter breakdown voltage; frequency 503 GHz; frequency 780 GHz; reduced base access distance; self-aligned emitter etching; voltage 4.1 V; Double heterojunction bipolar transistors; Indium phosphide; Sputtering; Wet etching; Double heterojunction bipolar transistors (DHBTs); Inp/GaAsSb; maximum oscillation frequency ( ({f} _{mathrm {MAX}}) ); millimeter-wave transistors;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2364622
Filename :
6954677
Link To Document :
