Title :
Single Photon Avalanche Diode Collection Efficiency Enhancement via Peripheral Well-Controlled Field
Author :
Savuskan, Vitali ; Gal, Lior ; Cristea, David ; Javitt, Michael ; Feiningstein, Amos ; Leitner, Tomer ; Nemirovsky, Yael
Author_Institution :
Dept. of Electr. Eng., Technion - Israel Inst. of Technol., Haifa, Israel
Abstract :
Single-photon avalanche diodes photon detection efficiency (PDE) and breakdown uniformity are studied. An approach to increase the PDE based on controlled breakdown of the peripheral region of the junction is described. Parameters influencing and controlling the peripheral region breakdown are discussed. A collection efficiency >60% is demonstrated, nearly twice that of a conventional, planar breakdown device.
Keywords :
avalanche diodes; semiconductor device breakdown; breakdown uniformity; peripheral region breakdown; peripheral well-controlled field; photon detection efficiency; planar breakdown device; single photon avalanche diode collection; CMOS integrated circuits; Charge carriers; Doping; Electric breakdown; Junctions; Photonics; Tunneling; Avalanche breakdown; CMOS single-photon avalanche diode (SPAD); image sensors; photodiodes; photodiodes.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2421500
