1.3 μm-GaInNAsSb based material and its application to VCSELs

Author

Shimizu, H. ; Setiagung, C. ; Ikenaga, Y. ; Ariga, M. ; Kumada, K. ; Hama, T. ; Iwai, N. ; Kasukawa, A.

Author_Institution

Furukawa Electr. Co. Ltd., Yokohama, Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

263

Lastpage

268

Abstract

1.3 μm-range GaInNAsSb material and its application to VCSELs were investigated. GaInNAsSb active layer that include the small amount of Sb can be easily grown in 2 dimensional manner as compared with GaInNAs due to the suppression of the formation of 3-dimensional growth in MBE growth. We obtained the lowest Jth per well (150A/cm²/well) as for the edge-emission type lasers due to the high quality of GaInNAsSb-QW. Using this material for the active media, we accomplished the first CW operation of 1.3 μm-range GaInNAsSb VCSELs.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; semiconductor device measurement; semiconductor quantum wells; surface emitting lasers; 1.3 micron; CW operation; GaInNAsSb; QW; VCSELs; edge-emission type lasers; Crystalline materials; Crystallization; Electrons; Gallium arsenide; Optical materials; Photoluminescence; Plasma temperature; Thermal conductivity; Vertical cavity surface emitting lasers; Wide area networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205366

Filename

1205366