• DocumentCode
    396286
  • Title

    Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy

  • Author

    Makino, Shigeki ; Miyamoto, Tomoyda ; Ohta, Masataka ; Matsuura, Tetsuya ; Matsui, Yasutaka ; Koyama, Fumio

  • Author_Institution
    Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
  • fYear
    2003
  • fDate
    12-16 May 2003
  • Firstpage
    460
  • Lastpage
    463
  • Abstract
    The self-assembled GaInNAs quantum dot (QD) has proposed as a novel material system for long wavelength lasers on GaAs substrate. In this paper, we have investigated the thermal annealing effect on GaInNAs QDs. The increase of the PL intensity and blue shift of peak wavelength was observed by thermal annealing. For 600°C annealing, the PL intensity was increased with the increase of annealing time and maximum intensity was obtained at 2 hours. On the other hand, PL intensity was increased after 30s annealing, then decreased at longer time for 700°C annealing. A larger blue shift of peak wavelength compared to GaInNAs quantum well was observed. It is considered that the interdiffusion was enhanced in QD system due to its large strain and interface area between GaAs capping layer.
  • Keywords
    III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; internal stresses; photoluminescence; self-assembly; semiconductor quantum dots; spectral line intensity; spectral line shift; 2 hour; 30 s; 600 degC; 700 degC; GaAs; GaInNAs quantum well; GaInNAs-GaAs; PL intensity; blue shift; chemical beam epitaxy; interdiffusion; internal strain; long wavelength lasers; self-assembled GaInNAs/GaAs quantum dots; thermal annealing; Annealing; Chemical lasers; Epitaxial growth; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Optical materials; Quantum dot lasers; Quantum dots; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2003. International Conference on
  • Print_ISBN
    0-7803-7704-4
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2003.1205416
  • Filename
    1205416