DocumentCode
396286
Title
Thermal annealing effect on self-assembled GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
Author
Makino, Shigeki ; Miyamoto, Tomoyda ; Ohta, Masataka ; Matsuura, Tetsuya ; Matsui, Yasutaka ; Koyama, Fumio
Author_Institution
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
fYear
2003
fDate
12-16 May 2003
Firstpage
460
Lastpage
463
Abstract
The self-assembled GaInNAs quantum dot (QD) has proposed as a novel material system for long wavelength lasers on GaAs substrate. In this paper, we have investigated the thermal annealing effect on GaInNAs QDs. The increase of the PL intensity and blue shift of peak wavelength was observed by thermal annealing. For 600°C annealing, the PL intensity was increased with the increase of annealing time and maximum intensity was obtained at 2 hours. On the other hand, PL intensity was increased after 30s annealing, then decreased at longer time for 700°C annealing. A larger blue shift of peak wavelength compared to GaInNAs quantum well was observed. It is considered that the interdiffusion was enhanced in QD system due to its large strain and interface area between GaAs capping layer.
Keywords
III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; internal stresses; photoluminescence; self-assembly; semiconductor quantum dots; spectral line intensity; spectral line shift; 2 hour; 30 s; 600 degC; 700 degC; GaAs; GaInNAs quantum well; GaInNAs-GaAs; PL intensity; blue shift; chemical beam epitaxy; interdiffusion; internal strain; long wavelength lasers; self-assembled GaInNAs/GaAs quantum dots; thermal annealing; Annealing; Chemical lasers; Epitaxial growth; Gallium arsenide; Laser beams; Molecular beam epitaxial growth; Optical materials; Quantum dot lasers; Quantum dots; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2003. International Conference on
Print_ISBN
0-7803-7704-4
Type
conf
DOI
10.1109/ICIPRM.2003.1205416
Filename
1205416
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