Interface structures of OMVPE-grown GaAs/GaInP/GaAs studied by X-ray CTR scattering measurement

GaAs/GaInP/GaAs structures grown by organometallic vapor phase epitaxy with various growth-temperature sequences were investigated using X-ray crystal truncation rod scattering measurement. When the GaAs/GaInP/GaAs structure was grown at 540°C, the structure was well defined as intended. On the other hand, when the growth temperature of the GaAs layer on GaInP was 580°C, In atoms significantly distributed in the GaAs layers, and when the growth temperature of the GaInP layer was 580°C, the peak In composition of the GaInP layer was lower than designed value. However, the structure was not affected so much by the growth temperature of the GaAs layer under the GaInP layer.