Interface structures of OMVPE-grown GaAs/GaInP/GaAs studied by X-ray CTR scattering measurement

Author

Tabuchi, M. ; Hisadome, S. ; Katou, D. ; Yoshikane, T. ; Urakami, A. ; Inoue, K. ; Koizumi, A. ; Fujiwara, Yuichiro ; Takeda, Y.

Author_Institution

Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

534

Lastpage

537

Abstract

GaAs/GaInP/GaAs structures grown by organometallic vapor phase epitaxy with various growth-temperature sequences were investigated using X-ray crystal truncation rod scattering measurement. When the GaAs/GaInP/GaAs structure was grown at 540°C, the structure was well defined as intended. On the other hand, when the growth temperature of the GaAs layer on GaInP was 580°C, In atoms significantly distributed in the GaAs layers, and when the growth temperature of the GaInP layer was 580°C, the peak In composition of the GaInP layer was lower than designed value. However, the structure was not affected so much by the growth temperature of the GaAs layer under the GaInP layer.

Keywords

III-V semiconductors; MOCVD; X-ray scattering; gallium arsenide; indium compounds; interface structure; semiconductor growth; vapour phase epitaxial growth; 540 degC; 580 degC; GaAs-GaInP-GaAs; OMVPE-grown GaAs/GaInP/GaAs; X-ray CTR scattering measurement; X-ray crystal truncation rod scattering measurement; growth temperature; interface structures; organometallic vapor phase epitaxy; peak In composition; Atomic layer deposition; Atomic measurements; Epitaxial growth; Gain measurement; Gallium arsenide; Phase measurement; Rough surfaces; Surface roughness; Temperature; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205434

Filename

1205434