Low threshold membrane BH-DFB laser arrays for 1490-1565nm wavelength range

Author

Okamoto, T. ; Onodera, Y. ; Yamazaki, T. ; Tamura, S. ; Arai, S.

Author_Institution

Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan

fYear

2003

fDate

12-16 May 2003

Firstpage

558

Lastpage

561

Abstract

High optical confinement and high index coupling in 1.55 μm-wavelength GaInAsP/InP membrane buried heterostructure distributed feedback (BH-DFB) lasers consisting of deeply etched single-quantum-well wire-like active regions were demonstrated under room-temperature (RT) continuous-wave (CW) optical pumping. We have realized membrane BH-DFB laser arrays by arranging the laser cavities (10 μm spaced 15 elements with 5 different grating periods). A total wavelength span of 72 nm was achieved with a small lasing wavelength fluctuation of up to ±1.2 nm at RT-CW condition under optical pumping. From this value, membrane thickness fluctuation was estimated to be ±0.4 nm. Threshold pump power of 3.4 mW and SMSR of 45 dB were achieved in a typical device.

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical pumping; semiconductor lasers; 1.55 micron; 1490 to 1565 nm; 3.4 mW; GaInAsP-InP; GaInAsP/InP; deeply etched single-quantum-well wire-like active regions; high index coupling; high optical confinement; low threshold membrane BH-DFB laser arrays; membrane buried heterostructure distributed feedback laser; small lasing wavelength fluctuation; Biomembranes; Distributed feedback devices; Fluctuations; Indium phosphide; Laser feedback; Optical arrays; Optical coupling; Optical feedback; Optical pumping; Pump lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205441

Filename

1205441