High resolution electrical characterization of laterally overgrown epitaxial InP

Author

Anand, S. ; Sun, Y.T. ; Lourdudoss, S. ; Xu, M.W. ; Vandervorst, W.

Author_Institution

Dept. of Microelectron. & Inf. Technol., R. Inst. of Technol., Kista, Sweden

fYear

2003

fDate

12-16 May 2003

Firstpage

563

Lastpage

566

Abstract

Dopant incorporation in epitaxial lateral over-growth of InP is investigated by scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). Dramatic variations in doping contrast in the laterally overgrown regions are observed both in SCM and SSRM measurements implying highly inhomogeneous dopant incorporation. The observed doping variations are explained by surface bonding configurations in the different emerging planes during growth. The results show that methods such as SCM and SSRM not only provide detailed electrical information on a nanometer scale, but also give insights into the growth mechanisms.

Keywords

III-V semiconductors; electrical resistivity; indium compounds; semiconductor doping; semiconductor epitaxial layers; InP; dopant incorporation; doping variations; emerging planes; high resolution electrical characterization; highly inhomogeneous dopant incorporation; laterally overgrown epitaxial InP; scanning capacitance microscopy; scanning spreading resistance microscopy; surface bonding; Bonding; Capacitance measurement; Doping; Electrical resistance measurement; Epitaxial growth; Indium phosphide; Integrated circuit technology; Microscopy; Substrates; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205443

Filename

1205443