Development of 50 mm diameter non-polar gallium nitride substrates for device applications

Author

Maruska, H.P. ; Hill, D.W. ; Chou, M.M.C. ; Gallagher, J.J. ; Chai, B.H. ; Vanfleet, R. ; Simmons, J. ; Bhattacharyya, A. ; Friel, I. ; Chen, Tai-Chou ; Li, W. ; Cabalu, J. ; Fedyunin, Y. ; Ludwig, K.F., Jr. ; Moustakas, T.D.

Author_Institution

Crystal Photonics Inc., Sanford, FL, USA

fYear

2003

fDate

12-16 May 2003

Firstpage

567

Lastpage

570

Abstract

We report the development of large 50 mm diameter free standing wafers of GaN. GaN layers up to 350 μm thick have been grown by HVPE on lattice-matched LiAlO₂ substrates. The original oxide substrates were removed by wet chemical etching, and the defect structure of the GaN wafers has been investigated. The issue of stacking faults vs. polar inversion domains has been resolved in favor of ABABACAC stacking sequences. A UV-emitting LED (368 nm) has been developed on these substrates, using molecular beam epitaxy.

Keywords

III-V semiconductors; etching; gallium compounds; light emitting diodes; semiconductor epitaxial layers; semiconductor growth; stacking faults; vapour phase epitaxial growth; wide band gap semiconductors; 350 micron; 368 nm; 50 mm; GaN; GaN layers; HVPE; UV-emitting LED; defect structure; device applications; lattice-matched LiAlO₂ substrate; molecular beam epitaxy; oxide substrates; polar inversion domains; stacking faults; wet chemical etching; Epitaxial growth; Gallium nitride; III-V semiconductor materials; Molecular beam epitaxial growth; Nitrogen; Optical films; Photonic crystals; Plasma temperature; Stacking; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2003. International Conference on

Print_ISBN

0-7803-7704-4

Type

conf

DOI

10.1109/ICIPRM.2003.1205444

Filename

1205444