Integrated inductors over MOSFETs - experimental results of a three dimensional integrated structure

In this paper, we introduce a three dimensional topology and present its RF characteristics. This topology consists of a MOSFET transistor positioned underneath an integrated inductor with both elements placed on the same silicon die so as to form a three-dimensional integrated structure. The advantage of this structure is that it uses the vacant area underneath the inductor so as to minimize the actual surface it occupies and make its usage more economic and area efficient for analog integrated circuit design.