Integrated inductors over MOSFETs - experimental results of a three dimensional integrated structure

Author

Nastos, Nikolaos ; Papananos, Yannis

Author_Institution

Microelectron. Circuit. Design Group, Nat. Tech. Univ. of Athens, Greece

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

In this paper, we introduce a three dimensional topology and present its RF characteristics. This topology consists of a MOSFET transistor positioned underneath an integrated inductor with both elements placed on the same silicon die so as to form a three-dimensional integrated structure. The advantage of this structure is that it uses the vacant area underneath the inductor so as to minimize the actual surface it occupies and make its usage more economic and area efficient for analog integrated circuit design.

Keywords

MOS analogue integrated circuits; Q-factor; circuit optimisation; inductors; integrated circuit design; integrated circuit measurement; network topology; 3D integrated structure; 3D topology RF characteristics; Q factor; analog integrated circuit design; area efficiency; inductor surface area minimization; integrated inductor; sub-inductor positioned MOSFET transistor; sub-inductor vacant area; CMOS technology; Circuit topology; Displays; Inductors; MOSFETs; Microelectronics; Q factor; Radio frequency; Silicon; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205499

Filename

1205499