A 7 milliwatt 1GBPS CMOS optical receiver for through wafer communication

Author

Apsel, A. ; Andreou, A.G.

Author_Institution

Cornell Univ., Ithaca, NY, USA

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

In this paper, we present an arrayable silicon on sapphire receiver, which as part of an interconnect, can simplify routing of high bit rate signals. The receiver has a small footprint of 40 μm×70 μm in a 0.5 μm ultra-thin silicon on sapphire (UTSi^TM) CMOS process and low power consumption of 7 mW per channel. Our results show good operation up to 1 Gbps data rates.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit design; integrated circuit measurement; integrated optoelectronics; low-power electronics; optical interconnections; optical receivers; silicon; silicon-on-insulator; 0.5 micron; 1 Gbit/s; 40 micron; 7 mW; 70 micron; CMOS optical receiver; Si-Al₂O₃; arrayable silicon on sapphire receiver; high bit rate signal routing; low power consumption; optical interconnect; receiver data rate; receiver footprint; through wafer communication; ultra-thin SOS receiver; Bandwidth; Bit rate; Capacitance; Circuits; Differential amplifiers; Energy consumption; Optical amplifiers; Optical receivers; Silicon; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205502

Filename

1205502