A 10 milliwatt 2 Gbps CMOS optical receiver for optoelectronic interconnect

Author

Apsel, A. ; Andreou, A.G.

Author_Institution

Cornell Univ., Ithaca, NY, USA

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

We propose a novel cross coupled differential receiver to be used as part of a low power inter-chip optical interconnect. The internal amplifier of the transimpedance first stage provides high gain without requiring large, capacitive input gates. The resulting transimpedance stage extends the bandwidth of the differential receiver when small photodetectors are used. Preliminary results indicate a bandwidth of 1.4 GHz with a power consumption of 10 mW in a 0.5 μm UTSi^TM SOS CMOS process.

Keywords

CMOS integrated circuits; integrated circuit interconnections; integrated optoelectronics; low-power electronics; optical interconnections; optical receivers; photodetectors; silicon-on-insulator; 0.5 micron; 1.4 GHz; 10 mW; 2 Gbit/s; CMOS optical receiver; Si-Al₂O₃; UTSi SOS CMOS process; capacitive input gates; cross coupled differential receiver; differential receiver bandwidth; low power inter-chip optical interconnect; optoelectronic interconnect; photodetectors; power consumption; transimpedance first stage internal amplifier; Bandwidth; CMOS process; Circuits; Differential amplifiers; Optical amplifiers; Optical fiber networks; Optical interconnections; Optical receivers; Optical transmitters; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205504

Filename

1205504