Resistive FET IQ vector modulator using multilayer photoimageable thick-film technology

Author

Ng, C.Y. ; Chongcheawchamnan, M. ; Robertson, I.D. ; Cho, K.

Author_Institution

Sch. of Electron. & Phys. Sci., Surrey Univ., Guildford, UK

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

A novel C-band IQ vector modulator is presented in this paper. The circuit uses two GaAs MMIC FET quads operating in resistive mode. The balanced configuration of each resistive FET bi-phase modulator provides high linearity and isolation. The vector modulator substrate, incorporating the multilayer baluns, 90 degree coupler and in-phase power combiner, measures 25.4mm × 25.4mm and is fabricated using photoimageable thick-film processing technique. This modified thick-film process is capable of implementing 3D Multi-Chip Modules (MCM-C), a promising technology for low-cost solutions for microwave components.

Keywords

III-V semiconductors; field effect MMIC; gallium arsenide; modulators; multichip modules; thick film devices; 3D MCM-C; 90 degree coupler; C-band IQ vector modulator; GaAs; GaAs MMIC FET quad; balanced configuration; bi-phase modulator; in-phase power combiner; microwave component; multilayer balun; multilayer photoimageable thick-film technology; resistive mode; Coupling circuits; FETs; Gallium arsenide; Impedance matching; Isolation technology; Linearity; MMICs; Nonhomogeneous media; Power combiners; Power measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205519

Filename

1205519