Dual-band sub-1 V CMOS LNA for 802.11a/b WLAN applications

Author

Tsang, Tommy K K ; El-Gamal, Mourad N.

Author_Institution

Microelectron. & Comput. Syst. Lab., McGill Univ., Montreal, Que., Canada

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

This paper presents the design and experimental results of a dual-band CMOS low noise amplifier (LNA), which can operate from a supply voltage as low as 0.7 V. A switched inductor technique is used. The LNA was fabricated in a standard 0.18 μm CMOS process, and is designed to be used in a dual-band 2.4- and 5-GHz WLAN receiver. With a 1 V supply, the LNA exhibits a measured power gain and noise figure of S₂₁=11.6 dB and NF=2.3 dB for the 2.4 GHz band, and S₂₁=10.8 dB and NF=2.9 dB for the 5 GHz band.

Keywords

CMOS analogue integrated circuits; integrated circuit noise; low-power electronics; radio receivers; radiofrequency amplifiers; radiofrequency integrated circuits; wireless LAN; 0.18 micron; 1 V; 10.8 dB; 11.6 dB; 2.3 dB; 2.4 GHz; 2.9 dB; 5 GHz; 802.11a/b WLAN receiver; dual-band CMOS low-noise amplifier; low-voltage operation; noise figure; power gain; switched inductor technique; CMOS process; Dual band; Gain measurement; Inductors; Low voltage; Low-noise amplifiers; Noise measurement; Power measurement; Process design; Wireless LAN;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205539

Filename

1205539