DocumentCode :
396342
Title :
Self-regulated four-phased charge pump with boosted wells
Author :
Shor, Joseph S. ; Polansky, Yan ; Sofer, Yair ; Maayan, Eduardo
Author_Institution :
Saifun Semicond., Netanya, Israel
Volume :
1
fYear :
2003
fDate :
25-28 May 2003
Abstract :
Charge pumps are useful to achieve on-chip boosted voltages in EPROM and other NVM devices. A new capacitive charge pump architecture is suggested which eliminates bulk effect by boosting the wells of transistors in the charge pump stages. In addition, the pump contains an internal voltage regulator, enabling it to supply a constant boosted output, regardless of process, environment and loading conditions. The pump operates from a 2.7V supply, provides up to 10mA at 8V and occupies 2 mm2.
Keywords :
EPROM; voltage regulators; 10 mA; 2.7 V; 8 V; EPROM; boosted transistor well; capacitive architecture; internal voltage regulator; nonvolatile memory; on-chip voltage; self-regulated four-phased charge pump; Boosting; Charge pumps; Charge transfer; Clocks; Diodes; EPROM; MOS capacitors; Nonvolatile memory; Regulators; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
Type :
conf
DOI :
10.1109/ISCAS.2003.1205545
Filename :
1205545
Link To Document :
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