Title :
SiGe HBT power amplifier for IS-95 CDMA using a novel process, voltage, and temperature insensitive biasing scheme
Author :
Srirattana, N. ; Qureshi, M.S. ; Aude, A. ; Krishnamurthy, V. ; Heo, D. ; Allen, P.E. ; Laskar, J.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
A novel bias current circuitry for SiGe HBT power amplifier which achieves highly predictable stable current under process, voltage, and temperature (PVT) variations is described in this paper. This approach is ideal for mobile applications under extreme operating conditions. The design offers temperature coefficient of 15.7 ppm/°C and enables the stabilization of efficiency and output power with ease. The concept was applied to a dual stage power amplifier designed for IS-95 CDMA standard. Maximum linear output power of 28.2 dBm with a gain of 28 dB at 2.5V supply voltage was achieved. The power amplifier has shown a very good stable performance under process, supply voltage, and temperature variations.
Keywords :
Ge-Si alloys; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; bipolar MMIC; circuit stability; code division multiple access; heterojunction bipolar transistors; 2.5 V; 28 dB; HBT; IS-95 CDMA; SiGe; bias current circuitry; dual stage power amplifier; efficiency; extreme operating conditions; linear output power; output power; power amplifier; predictable stable current; process variations; stabilization; supply voltage variations; temperature coefficient; temperature insensitive biasing scheme; temperature variations; Circuits; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Power amplifiers; Power generation; Silicon germanium; Temperature; Voltage;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1205594
