Inductorless RF amplifier with tuneable band-selection and image rejection

Author

Thanachayanont, A. ; Sae-Ngow, S.

Author_Institution

Fac. of Eng., King Mongkut´´s Inst. of Technol., Bangkok, Thailand

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

This paper describes the design of two inductorless amplifiers that provide both band-selection and image-rejection, and thus can be used to perform the functions of bandpass filters, low-noise amplifier and image-rejection filter in the superheterodyne RF receiver front-end. Two topologies, namely the source-degeneration and bridge-T notch, are employed due to their excellent image rejection and independent control of the shape and depth. Simulation results using a 0.35-μm CMOS technology demonstrate the feasibility of both circuits for operation in the low GHz frequency range with passband gain around 30 dB and maximum image suppression of 80 dB.

Keywords

CMOS analogue integrated circuits; Q-factor; UHF amplifiers; UHF integrated circuits; active filters; band-pass filters; bridge circuits; notch filters; superheterodyne receivers; 0.35 micron; 30 dB; CMOS technology; LNA; bandpass filters; bridge-T notch topology; image suppression; image-rejection filter; inductorless RF amplifier; low-noise amplifier; source-degeneration topology; superheterodyne RF receiver front-end; tuneable band-selection; Band pass filters; CMOS technology; Circuit simulation; Circuit topology; Low-noise amplifiers; Passband; Radio frequency; Radiofrequency amplifiers; Shape control; Tunable circuits and devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205628

Filename

1205628