Extremely low supply voltage circuits based on quasi-floating gate supply voltage boosting

Author

Muñoz, Fernando ; Lopez-Martin, Antonio ; Carvajal, Ramon G. ; Ramirez-Angulo, Jaime ; Torralba, A. ; Kachare, Meghraj ; Palomo, B.

Author_Institution

Departamento de Ingenieria Electronica, Univ. de Sevilla, Spain

Volume

1

fYear

2003

fDate

25-28 May 2003

Abstract

A simple scheme to boost the supply voltage above and below the supply rails is introduced. Three applications of this technique are discussed: a) a rail-to-rail sample and hold circuit operating from a single supply voltage close to a transistor´s threshold voltage; b) a low-voltage rail-to-rail switch for high precision applications; c) a NAND gate capable of operating with a single supply voltage close to one half of a transistor´s threshold voltage. Experimental results from prototypes in 1.5 μm CMOS technology are shown that verify the proposed approach.

Keywords

CMOS integrated circuits; field effect transistor switches; integrated circuit design; integrated circuit measurement; logic gates; low-power electronics; sample and hold circuits; 1.5 micron; CMOS technology; NAND gate; high precision rail-to-rail switch; low supply voltage circuits; quasi-floating gate supply voltage boosting; rail-to-rail sample and hold circuit; single supply voltage; supply voltage rails; transistor threshold voltage; Boosting; CMOS technology; Diodes; Low voltage; Prototypes; Rails; Resistors; Switches; Switching circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on

Print_ISBN

0-7803-7761-3

Type

conf

DOI

10.1109/ISCAS.2003.1205689

Filename

1205689