DocumentCode :
397155
Title :
Anomalous resistance effect of Si containing deep impurities and its application to micro-sensor
Author :
Li, Xing ; Liang, Jia-chang ; Li, Ming
Author_Institution :
Dept. of Electron. Eng., Tianjin Univ., China
Volume :
1
fYear :
2003
fDate :
4-7 May 2003
Firstpage :
39
Abstract :
The resistance effect of semiconductors containing shallow impurities obeys T-32/ rule. However, for the single crystal n-type silicon containing deep acceptor impurities, the variation of resistance with temperature mainly depends on an exponential term exp[- (EF - EA/kT]. This anomalous resistance effect can increase the temperature sensitivity by 1,000 times. Its application to the micro-flow-sensor not only increases the sensitivity, but also reduces its time constant greatly.
Keywords :
electric resistance; elemental semiconductors; gold; impurity states; microsensors; silicon; Si:Au; anomalous resistance effect; deep acceptor impurities; deep impurities; microflow-sensor; resistance variations; semiconductors; single crystal n-type silicon; temperature sensitivity; time constant; wheatstone bridge; Application software; Bridge circuits; Gold; Photonic band gap; Power measurement; Resistors; Semiconductor impurities; Silicon; Temperature sensors; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering, 2003. IEEE CCECE 2003. Canadian Conference on
ISSN :
0840-7789
Print_ISBN :
0-7803-7781-8
Type :
conf
DOI :
10.1109/CCECE.2003.1226339
Filename :
1226339
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=397155
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