Evaluation of aluminum contamination on large-diameter wafers in ULSI fabrication

Author

Nutsch, A. ; Shimizu, Hiroshi

Author_Institution

Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen, Germany

fYear

2003

fDate

30 Sept.-2 Oct. 2003

Firstpage

229

Lastpage

232

Abstract

Sophisticated impurity extraction methods, VPD (vapor phase deposition) and PEM (pack extraction method), were used to analyze the Al contamination on the back side of large-diameter reclaim wafers. Compared with the VPD method, HF/HNO₃-PEM was found to be more effective to extract impurities from the surface layers of wafers. Al based slurry residues and Al embedded in the remaining subsurface damage were responsible for the back side contamination. Advanced 300 mm silicon technologies are based on a colloidal silicon polishing process avoiding the above described contamination.

Keywords

ULSI; aluminium; elemental semiconductors; integrated circuit manufacture; polishing; silicon; slurries; surface contamination; wafer-scale integration; 300 mm; Al based slurry residues; Al contamination; Al-Si; ULSI fabrication; VPD; aluminum contamination; colloidal silicon polishing process; impurity extraction; pack extraction; silicon technology; vapor phase deposition; wafer surface layer; Aluminum; Artificial intelligence; Circuit testing; Fabrication; Impurities; Iron; Lapping; Silicon; Surface contamination; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing, 2003 IEEE International Symposium on

ISSN

1523-553X

Print_ISBN

0-7803-7894-6

Type

conf

DOI

10.1109/ISSM.2003.1243271

Filename

1243271