Title :
Evaluation of aluminum contamination on large-diameter wafers in ULSI fabrication
Author :
Nutsch, A. ; Shimizu, Hiroshi
Author_Institution :
Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen, Germany
fDate :
30 Sept.-2 Oct. 2003
Abstract :
Sophisticated impurity extraction methods, VPD (vapor phase deposition) and PEM (pack extraction method), were used to analyze the Al contamination on the back side of large-diameter reclaim wafers. Compared with the VPD method, HF/HNO3-PEM was found to be more effective to extract impurities from the surface layers of wafers. Al based slurry residues and Al embedded in the remaining subsurface damage were responsible for the back side contamination. Advanced 300 mm silicon technologies are based on a colloidal silicon polishing process avoiding the above described contamination.
Keywords :
ULSI; aluminium; elemental semiconductors; integrated circuit manufacture; polishing; silicon; slurries; surface contamination; wafer-scale integration; 300 mm; Al based slurry residues; Al contamination; Al-Si; ULSI fabrication; VPD; aluminum contamination; colloidal silicon polishing process; impurity extraction; pack extraction; silicon technology; vapor phase deposition; wafer surface layer; Aluminum; Artificial intelligence; Circuit testing; Fabrication; Impurities; Iron; Lapping; Silicon; Surface contamination; Ultra large scale integration;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243271
