Title :
Megasonic free single wafer ozone jet cleans: concept and feasibility
Author :
Jungyup Kim ; Yongbae Kim
Author_Institution :
Novo Res. Inc., San Jose, CA, USA
fDate :
30 Sept.-2 Oct. 2003
Abstract :
A newly developed single wafer ozone cleaning process shows high particle removal performance without the use of megasonics. The process utilizes gaseous ozone stream with diluted HF and NH4OH chemicals to remove wafer particles at room temperature. This new single wafer cleaning process utilizes the strong oxidative properties of ozone with the zeta potential advantages of NH4OH for particle removal. There are significant cost advantages when compared to a conventional batch type cleaning process. The process can be applied to FEOL and BEOL cleans including post-CMP clean.
Keywords :
electrokinetic effects; elemental semiconductors; integrated circuit manufacture; silicon; surface cleaning; 293 K; BEOL cleaning; FEOL cleaning; HF chemical; NH4OH chemical; Si; gaseous ozone stream; megasonic free single wafer ozone jet cleaning; oxidative properties; room temperature; wafer cleaning; zeta potential; Chemical processes; Chemical technology; Costs; Hafnium; Hardware; Orifices; Oxidation; Surface cleaning; Surface treatment; Temperature;
Conference_Titel :
Semiconductor Manufacturing, 2003 IEEE International Symposium on
Print_ISBN :
0-7803-7894-6
DOI :
10.1109/ISSM.2003.1243272
