Title :
Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device
Author :
Weiwei Mu ; Pei Zhang ; Jun Xu ; Shenghua Sun ; Jie Xu ; Wei Li ; Kunji Chen
Author_Institution :
Nat. Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China
Abstract :
Light emitting devices based on Si quantum dots/SiO2 multilayers with dot size of 2.5 nm have been prepared. Bright white light emission is achieved under the dc driving conditions and the turn-on voltage of the device is as low as 5 V. The frequency-dependent electroluminescence intensity was observed under ac conditions of square and sinusoidal wave. It was found that the emission wavelength changes with frequency when sinusoidal ac is applied. The degradation of emission intensity is less than 12% after 3 h for ac driving condition, exhibiting the better device stability compared to the dc driving one.
Keywords :
driver circuits; electroluminescence; elemental semiconductors; light emitting devices; quantum dots; silicon; silicon compounds; Si-SiO2; alternating current driver circuits; device stability; direct current driver circuits; emission intensity degradation; frequency dependent electroluminescence intensity; light emitting device; quantum dot device; size 2.5 nm; voltage 5 V; white light emission; DC motors; Electroluminescence; Quantum dots; Direct current (dc); Si quantum dots (Si QDs); electroluminescence (EL); frequency dependent;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2255587
