Direct-Current and Alternating-Current Driving Si Quantum Dots-Based Light Emitting Device

Author

Weiwei Mu ; Pei Zhang ; Jun Xu ; Shenghua Sun ; Jie Xu ; Wei Li ; Kunji Chen

Author_Institution

Nat. Lab. of Solid State Microstructures, Nanjing Univ., Nanjing, China

Volume

20

Issue

4

fYear

2014

fDate

July-Aug. 2014

Firstpage

206

Lastpage

211

Abstract

Light emitting devices based on Si quantum dots/SiO₂ multilayers with dot size of 2.5 nm have been prepared. Bright white light emission is achieved under the dc driving conditions and the turn-on voltage of the device is as low as 5 V. The frequency-dependent electroluminescence intensity was observed under ac conditions of square and sinusoidal wave. It was found that the emission wavelength changes with frequency when sinusoidal ac is applied. The degradation of emission intensity is less than 12% after 3 h for ac driving condition, exhibiting the better device stability compared to the dc driving one.

Keywords

driver circuits; electroluminescence; elemental semiconductors; light emitting devices; quantum dots; silicon; silicon compounds; Si-SiO₂; alternating current driver circuits; device stability; direct current driver circuits; emission intensity degradation; frequency dependent electroluminescence intensity; light emitting device; quantum dot device; size 2.5 nm; voltage 5 V; white light emission; DC motors; Electroluminescence; Quantum dots; Direct current (dc); Si quantum dots (Si QDs); electroluminescence (EL); frequency dependent;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2255587

Filename

6509918