Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical Model

Author

Schwarz, Mathias ; Holtij, Thomas ; Kloes, Alexander ; Iniguez, B.

Author_Institution

Tech. Hochschule Mittelhessen, Friedberg, Germany

Volume

60

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

884

Lastpage

886

Abstract

A comprehensive study of the impact of the Schottky barrier height, affecting the ambipolar behavior of Schottky barrier double-gate MOSFETs using an analytical model and Synopsys TCAD Sentaurus, is presented. The performance is analyzed with respect to the most important physical parameters and their impact on the device figure-of-merit. Ambipolar behavior is an important factor and must be carefully considered in the device design. This brief shows that the Schottky barrier height plays a very important role and determines the bottleneck on the device performance.

Keywords

MOSFET; Schottky gate field effect transistors; semiconductor device models; technology CAD (electronics); Schottky barrier double-gate MOSFET; Schottky barrier height; Synopsys TCAD Sentaurus; ambipolar behavior; device design; device figure-of-merit; two-dimensional analytical model; Analytical models; Data models; Logic gates; Numerical models; Predictive models; Schottky barriers; Tunneling; 2-D Poisson; Analytical modeling; MOSFET; Schottky barrier; compact modeling; device scaling; scaling behavior;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2235146

Filename

6407992