DocumentCode :
39883
Title :
A Phase-Leg Power Module Packaged With Optimized Planar Interconnections and Integrated Double-Sided Cooling
Author :
Zhenxian Liang ; Puqi Ning ; Wang, F. ; Marlino, Laura
Author_Institution :
Power Electron. & Electr. Machinery Group, Oak Ridge Nat. Lab., Knoxville, TN, USA
Volume :
2
Issue :
3
fYear :
2014
fDate :
Sept. 2014
Firstpage :
443
Lastpage :
450
Abstract :
A multilayer planar interconnection structure was used for the packaging of liquid-cooled automotive power modules. The power semiconductor switch dies are sandwiched between two symmetric substrates, providing planar electrical interconnections and insulation. Two minicoolers are directly bonded to the outside of these substrates, allowing double-sided, integrated cooling. The power switch dies are orientated in a face-up/face-down 3-D interconnection configuration to form a phase leg. The bonding areas between the dies and substrates, and the substrates and coolers are designed to use identical materials and are formed in one heating process. A special packaging process has been developed so that high-efficiency production can be implemented. Incorporating high-efficiency cooling and low-loss electrical interconnections allows dramatic improvements in systems´ cost, and electrical conversion efficiency. These features are demonstrated in a planar bond-packaged prototype of a 200 A/1200 V phase-leg power module made of silicon (Si) insulated gate bipolar transistor and PiN diodes.
Keywords :
cooling; elemental semiconductors; insulated gate bipolar transistors; insulation; integrated circuit bonding; integrated circuit interconnections; p-i-n diodes; power semiconductor switches; silicon; 3D interconnection; PiN diodes; Si; current 200 A; double-sided cooling; liquid-cooled automotive power modules; multilayer planar interconnection structure; phase-leg power module packaged; planar bond-packaged prototype; planar electrical insulation; planar electrical interconnections; planar interconnections; power semiconductor switch die; silicon insulated gate bipolar transistor; voltage 1200 V; Cooling; Electronic packaging thermal management; Inductance; Insulated gate bipolar transistors; Multichip modules; Automotive power converter; integrated cooling; power electronics packaging; power module;
fLanguage :
English
Journal_Title :
Emerging and Selected Topics in Power Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
2168-6777
Type :
jour
DOI :
10.1109/JESTPE.2014.2312292
Filename :
6774853
Link To Document :
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