• DocumentCode
    399026
  • Title

    InGaAs/AlAs/AlAsSb coupled quantum intersubband transition all-optical switch with low switching energy for OTDM

  • Author

    Simoyama, T. ; Yoshida, H. ; Kasai, J. ; Mozume, T. ; Achanta, V. ; Ishikawa, H.

  • Author_Institution
    Femtosecond Tech. Res. Assoc., Ibaraki, Japan
  • fYear
    2003
  • fDate
    23-28 March 2003
  • Firstpage
    538
  • Abstract
    We report a novel absorptive intersubband transition all-optical switch with low switching energy using InGaAs/AlAs/AlAsSb coupled quantum wells. Very low saturation energy density of 34 fJ/μm2 and switching energy of 10 pJ for 10 dB extinction ratio were observed.
  • Keywords
    III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; indium compounds; optical saturable absorption; optical switches; quantum well devices; semiconductor quantum wells; time division multiplexing; 10 pJ; InGaAs-AlAs-AlAsSb; InGaAs/AlAs/AlAsSb coupled quantum wells; OTDM; absorptive intersubband transition; all-optical switch; extinction ratio; switching energy; Indium gallium arsenide; Nonlinear optics; Optical mixing; Optical signal processing; Optical switches; Optical wavelength conversion; Quantum dots; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communications Conference, 2003. OFC 2003
  • Print_ISBN
    1-55752-746-6
  • Type

    conf

  • DOI
    10.1109/OFC.2003.1248395
  • Filename
    1248395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=399026