DocumentCode :
399026
Title :
InGaAs/AlAs/AlAsSb coupled quantum intersubband transition all-optical switch with low switching energy for OTDM
Author :
Simoyama, T. ; Yoshida, H. ; Kasai, J. ; Mozume, T. ; Achanta, V. ; Ishikawa, H.
Author_Institution :
Femtosecond Tech. Res. Assoc., Ibaraki, Japan
fYear :
2003
fDate :
23-28 March 2003
Firstpage :
538
Abstract :
We report a novel absorptive intersubband transition all-optical switch with low switching energy using InGaAs/AlAs/AlAsSb coupled quantum wells. Very low saturation energy density of 34 fJ/μm2 and switching energy of 10 pJ for 10 dB extinction ratio were observed.
Keywords :
III-V semiconductors; aluminium compounds; arsenic compounds; gallium arsenide; indium compounds; optical saturable absorption; optical switches; quantum well devices; semiconductor quantum wells; time division multiplexing; 10 pJ; InGaAs-AlAs-AlAsSb; InGaAs/AlAs/AlAsSb coupled quantum wells; OTDM; absorptive intersubband transition; all-optical switch; extinction ratio; switching energy; Indium gallium arsenide; Nonlinear optics; Optical mixing; Optical signal processing; Optical switches; Optical wavelength conversion; Quantum dots; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
Type :
conf
DOI :
10.1109/OFC.2003.1248395
Filename :
1248395
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=399026
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