Title :
Monolithic mode-locked laser on GaInAsP/InP for 160 Gb/s TDM
Author :
Huettl, B. ; Kaiser, R. ; Boczianowski, F. ; Fidorra, S. ; Heidrich, H. ; Jacumeit, G. ; Kroh, M. ; Rehbein, W. ; Stenzel, R. ; Stolpe, H.
Author_Institution :
Heinrich-Hertz-Inst., Berlin, Germany
Abstract :
Mode-locked laser OEICs on GaInAsP/InP for 160 Gb/s application in hybrid mode-locking operation are demonstrated with 40 GHz repetition rate, 2.4 ps pulse length, 230 fs timing jitter, and >1 mW fiber coupled power.
Keywords :
arsenic compounds; gallium compounds; indium compounds; integrated optoelectronics; laser mode locking; optical transmitters; semiconductor lasers; time division multiplexing; timing jitter; 160 Gbit/s; 2.4 ps; 230 fs; 40 GHz; GaInAsP-InP; GaInAsP-InP TDM mode-locked laser OEIC; III-V semiconductors; fiber coupled power; hybrid mode-locking operation; monolithic mode-locked laser; pulse length; repetition rate; timing jitter; Bit error rate; Forward error correction; Indium phosphide; Laser mode locking; Optical pulses; Optical signal processing; Pulse amplifiers; Solitons; Space vector pulse width modulation; Time division multiplexing;
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
DOI :
10.1109/OFC.2003.1248489
