Title :
Long wavelength surface emitting lasers in 1.2-1.3 μm wavelength band
Author :
Koyama, F. ; Miyamoto, T.
Author_Institution :
Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
We present the fabrication and lasing characteristics of 1.2-1.3 μm band GaInAs/GaAs and GaInNAs/GaAs VCSELs. Excellent temperature characteristics enable uncooled operations of long wavelength VCSELs. Also, multiple-wavelength VCSEL arrays are demonstrated for high capacity networks.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser arrays; optical fabrication; optical transmitters; surface emitting lasers; 1.2 to 1.3 micron; GaInAs-GaAs; GaInNAs-GaAs; GaInNAs-GaAs VCSELs; GalnAs-GaAs VCSELs; VCSEL fabrication; VCSEL uncooled operations; lasing characteristics; long wavelength surface emitting lasers; multiple-wavelength VCSEL arrays; optical fibre networks; temperature characteristics; wavelength band; Data communication; Electrons; Fiber lasers; Gallium arsenide; Quantum dot lasers; Quantum well lasers; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
DOI :
10.1109/OFC.2003.1248494
