DocumentCode :
399122
Title :
100°C, 10-Gb/s direct modulation with a low operation current of 1.3-μm AlGaInAs buried heterostructure DFB laser diodes
Author :
Muroya, Y. ; Okuda, T. ; Kobayashi, Ryota ; Tsuruoka, K. ; Ohsawa, Y. ; Koui, T. ; Tsukuda, T. ; Nakamura, T. ; Ito, A. ; Shimizu, J. ; Kobayashi, Kaoru
Author_Institution :
NEC Corp., Otsu, Japan
fYear :
2003
fDate :
23-28 March 2003
Firstpage :
683
Abstract :
1.3-μm AlGaInAs BH DFB laser diodes have been developed for the first time. 100°C, 10-Gb/s operation and transmission over 16 km of SMF were demonstrated with an 80-mA operating current and a 42-mAp-p modulation current.
Keywords :
III-V semiconductors; aluminium compounds; distributed feedback lasers; gallium compounds; indium compounds; optical modulation; optical transmitters; semiconductor lasers; 1.3 micron; 10 Gbit/s; 100 C; 16 km; 42 mA; 80 mA; AlGaInAs; AlGaInAs buried heterostructure DFB laser diodes; SMF; direct modulation current; operation current; Conducting materials; Costs; Diode lasers; Electrons; Frequency; Indium phosphide; Optical fiber communication; Optical materials; Optical waveguides; Quantum well devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
Type :
conf
DOI :
10.1109/OFC.2003.1248495
Filename :
1248495
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=399122
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