DocumentCode
399170
Title
10 Gb/s high power electro-absorption modulated laser monolithically integrated with a semiconductor optical amplifier for transmission over 80 km
Author
Kang, Bing ; Cho, Sangyeun ; Ahn, Jeongseob ; Kim, Jung-Ho ; Jeon, Dongsuk ; Lee, Youngjoo ; Lee, Sang-Rim ; Jang, Daeung ; Kim, T.
Author_Institution
Samsung Electro., Suwon, South Korea
fYear
2003
fDate
23-28 March 2003
Firstpage
751
Abstract
High average output power over +3 dBm was obtained in 10 Gb/s electro-absorption modulated laser for transmission over 80 km by amplifying the modulated signals through monolithically integrated semiconductor optical amplifier, for the first time to our knowledge.
Keywords
distributed feedback lasers; electroabsorption; integrated optoelectronics; monolithic integrated circuits; optical fibre communication; optical transmitters; semiconductor optical amplifiers; 10 Gbit/s; 80 km; DFB laser; electro-absorption modulated laser; monolithically integrated semiconductor optical amplifier; Chirp modulation; Optical distortion; Optical fiber dispersion; Optical filters; Optical modulation; Optical receivers; Optical transmitters; Power lasers; Semiconductor lasers; Semiconductor optical amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN
1-55752-746-6
Type
conf
DOI
10.1109/OFC.2003.1248546
Filename
1248546
Link To Document