Title :
115°C, 12.5-Gb/s direct modulation of 1.3-μm InGaAlAs-MQW RWG DFB laser with notch-free grating structure for datacom applications
Author :
Nakahara, K. ; Tsuchiya, T. ; Tanaka, S. ; Kitatani, T. ; Shinoda, K. ; Taniguchi, T. ; Kikawa, T. ; Nomoto, E. ; Fujisaki, S. ; Kudo, M. ; Sawada, M. ; Yuasa, T. ; Mukaikubo, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
Direct modulation at 12.5 Gb/s of 1.3-μm DFB RWG lasers with low-resistance notch-free gratings running at 115°C is experimentally demonstrated, for the first time. Moreover, 10-Gb/s modulated transmission over 30 km at 115°C was achieved.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; optical fibre communication; optical modulation; quantum well lasers; ridge waveguides; waveguide lasers; 1.3 micron; 10 Gbits/s; 115 C; 12.5 Gbits/s; 30 km; InGaAlAs; MQW; datacom applications; direct modulation; fiber transmission; notch-free grating structure; ridge waveguide DFB laser; semiconductor laser; Block codes; Frequency; Gratings; Laboratories; Light sources; Optical modulation; Optical saturation; Quantum well devices; Semiconductor lasers; Temperature;
Conference_Titel :
Optical Fiber Communications Conference, 2003. OFC 2003
Print_ISBN :
1-55752-746-6
DOI :
10.1109/OFC.2003.1248621
