Bipolar pulse width modulation driver for MEMS electrostatic actuator arrays

Author

Garverick, Steven L. ; Nagy, Michael L. ; Kane, Michael J. ; Guo, Jun

Author_Institution

Movaz Networks Inc., Norcross, GA, USA

fYear

2003

fDate

21-24 Sept. 2003

Firstpage

481

Lastpage

484

Abstract

Three-level pulse width modulation serves as the basis of an all-digital technique for driving an array of high-voltage electrostatic microactuators. DC bias is zero and maximum RMS voltage is equal to the single supply voltage. Driver arrays are implemented using a two-chip architecture: a logic chip and an HV level translator array. A micromirror driver array is described, with 1920 drivers that occupy an area of 1280 mm² and consumes 12.3 W from 5-V and 200-V supplies.

Keywords

arrays; bipolar logic circuits; bipolar memory circuits; content-addressable storage; driver circuits; electrostatic actuators; micromirrors; pulse width modulation; 12.3 W; 200 V; 5 V; DC bias; HV level translator array; MEMS electrostatic actuator arrays; all-digital technique; bipolar pulse width modulation driver; content-addressable memory; driver area; driver arrays; high-voltage electrostatic microactuators; logic chip; maximum RMS voltage; micromirror driver array; power consumption; three-level pulse width modulation; two-chip architecture; Driver circuits; Electrodes; Electrostatic actuators; Logic arrays; Microactuators; Micromechanical devices; Micromirrors; Pulse width modulation; Space vector pulse width modulation; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2003. Proceedings of the IEEE 2003

Print_ISBN

0-7803-7842-3

Type

conf

DOI

10.1109/CICC.2003.1249445

Filename

1249445