DocumentCode :
399630
Title :
Application of laser beam technology for preparation of oxide thin films
Author :
Kotlyarchuk, Bohdan ; Savchuk, Victor
Author_Institution :
Inst. of Appl. Problems of Mech. & Math., Nat. Acad. of Sci., Lviv, Ukraine
Volume :
1
fYear :
2003
fDate :
16-20 Sept. 2003
Firstpage :
149
Abstract :
The main aim of this research was to explore relationships between deposition parameters and properties of zinc and zirconium oxide films prepared by reactive pulsed laser deposition on different substrates. The structural, electrical and optical properties of grown films were investigated as a function of deposition parameters and thermodynamical conditions into the deposition chamber. On the basis of obtained results, we have developed a simple method for manufacturing of thin films without the annealing stage. Also, the main properties of grown films have been measured.
Keywords :
II-VI semiconductors; dielectric thin films; pulsed laser deposition; semiconductor thin films; zinc compounds; zirconium compounds; ZnO; ZrO2; electrical properties; optical properties; reactive pulsed laser deposition; structural properties; thermodynamical conditions; zinc oxide thin films; zirconium oxide thin films; Annealing; Laser applications; Laser beams; Manufacturing; Optical films; Optical pulses; Pulsed laser deposition; Transistors; Zinc; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on
Print_ISBN :
0-7803-7948-9
Type :
conf
DOI :
10.1109/CAOL.2003.1250537
Filename :
1250537
Link To Document :
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