Application of laser beam technology for preparation of oxide thin films

Author

Kotlyarchuk, Bohdan ; Savchuk, Victor

Author_Institution

Inst. of Appl. Problems of Mech. & Math., Nat. Acad. of Sci., Lviv, Ukraine

Volume

1

fYear

2003

fDate

16-20 Sept. 2003

Firstpage

149

Abstract

The main aim of this research was to explore relationships between deposition parameters and properties of zinc and zirconium oxide films prepared by reactive pulsed laser deposition on different substrates. The structural, electrical and optical properties of grown films were investigated as a function of deposition parameters and thermodynamical conditions into the deposition chamber. On the basis of obtained results, we have developed a simple method for manufacturing of thin films without the annealing stage. Also, the main properties of grown films have been measured.

Keywords

II-VI semiconductors; dielectric thin films; pulsed laser deposition; semiconductor thin films; zinc compounds; zirconium compounds; ZnO; ZrO₂; electrical properties; optical properties; reactive pulsed laser deposition; structural properties; thermodynamical conditions; zinc oxide thin films; zirconium oxide thin films; Annealing; Laser applications; Laser beams; Manufacturing; Optical films; Optical pulses; Pulsed laser deposition; Transistors; Zinc; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on

Print_ISBN

0-7803-7948-9

Type

conf

DOI

10.1109/CAOL.2003.1250537

Filename

1250537