Mid-infrared generation in vertical-cavity-surface-emitting laser

Author

Morozov, Yu A. ; Nefedov, I.S. ; Aleshkin, V. Ya

Author_Institution

Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow, Russia

Volume

1

fYear

2003

fDate

16-20 Sept. 2003

Firstpage

236

Abstract

The model of the vertical-cavity laser for mid-infrared emission caused by the internal nonlinear photomixing of two-frequency simultaneous generation is proposed. The effect of loss caused by free carriers both at near- and mid-infrared oscillations on output laser characteristics is analyzed. The difference frequency power in the mid-infrared range is shown to be about 0.1-1 μm for emitting surface of 10⁴-10⁵ μm². The resonant structure tuned to the mid-infrared oscillation frequency could substantially increase the power.

Keywords

infrared spectra; multiwave mixing; quantum cascade lasers; semiconductor device models; surface emitting lasers; difference frequency power; free carriers; internal nonlinear photomixing; mid-infrared oscillations; near-infrared oscillations; two-frequency simultaneous generation; vertical-cavity-surface-emitting laser; Crystals; Frequency; Laser modes; Laser theory; Lattices; Mirrors; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on

Print_ISBN

0-7803-7948-9

Type

conf

DOI

10.1109/CAOL.2003.1250569

Filename

1250569