Title :
Mid-infrared generation in vertical-cavity-surface-emitting laser
Author :
Morozov, Yu A. ; Nefedov, I.S. ; Aleshkin, V. Ya
Author_Institution :
Inst. of Radio Eng. & Electron., Russian Acad. of Sci., Moscow, Russia
Abstract :
The model of the vertical-cavity laser for mid-infrared emission caused by the internal nonlinear photomixing of two-frequency simultaneous generation is proposed. The effect of loss caused by free carriers both at near- and mid-infrared oscillations on output laser characteristics is analyzed. The difference frequency power in the mid-infrared range is shown to be about 0.1-1 μm for emitting surface of 104-105 μm2. The resonant structure tuned to the mid-infrared oscillation frequency could substantially increase the power.
Keywords :
infrared spectra; multiwave mixing; quantum cascade lasers; semiconductor device models; surface emitting lasers; difference frequency power; free carriers; internal nonlinear photomixing; mid-infrared oscillations; near-infrared oscillations; two-frequency simultaneous generation; vertical-cavity-surface-emitting laser; Crystals; Frequency; Laser modes; Laser theory; Lattices; Mirrors; Quantum well lasers; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on
Print_ISBN :
0-7803-7948-9
DOI :
10.1109/CAOL.2003.1250569
