DocumentCode
399658
Title
Thin structure of near-field emission of semiconductor laser
Author
Gaikovich, K.P. ; Dryakhlusin, V.F.
Author_Institution
Inst. for Phys. of Microstructures, Russian Acad. of Sci., Nizhny Novgorod, Russia
Volume
1
fYear
2003
fDate
16-20 Sept. 2003
Firstpage
249
Abstract
Results of the SNOM measurement analysis of a near-filed structure of the semiconductor laser emission are presented. Measurement results have been processed taking into account the probe transfer function and image deconvolution method based on the Tikhonov´s theory of ill-posed problems is applied to retrieve images distorted by the instrument transfer function influence. Using this approach, in the SNOM measurements small (3-4 %) variations with a spatial size of about 50 nm have been discerned.
Keywords
deconvolution; image reconstruction; near-field scanning optical microscopy; semiconductor lasers; SNOM measurement; Tikhonov theory; image deconvolution; image retrieval; near-field emission; probe transfer function; semiconductor laser; Deconvolution; Distortion measurement; Image retrieval; Instruments; Laser noise; Laser theory; Probes; Semiconductor lasers; Size measurement; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Optoelectronics and Lasers, 2003. Proceedings of CAOL 2003. First International Conference on
Print_ISBN
0-7803-7948-9
Type
conf
DOI
10.1109/CAOL.2003.1250574
Filename
1250574
Link To Document