Title :
Ultimate lithography using proximal probes for single electron device fabrication or nano-object addressing
Author :
Tonneau, D. ; Clement, N. ; Houel, A. ; Dallaporta, H. ; Safarov, V.
Author_Institution :
Faculte des Sci. de Luminy, GPEC, Marseille, France
fDate :
28 Sept.-2 Oct. 2003
Abstract :
The high resolution offered by Scanning Probe Microscopes suggested that these equipment could be used to pattern features of controlled geometries at a nanometric scale, not reachable by conventional lithography techniques. Two processes for metallic or semiconducting nanofeatures patterning by Scanning Tunnelling Microscope or Atomic Force Microscope are presented.
Keywords :
atomic force microscopy; nanolithography; scanning tunnelling microscopy; single electron devices; Atomic Force Microscope; Scanning Tunnelling Microscope; controlled geometries; high resolution; nano-object addressing; nanometric scale; pattern features; proximal probes; scanning probe microscopes; single electron device fabrication; ultimate lithography; Atomic force microscopy; Fabrication; Lithography; MOSFET circuits; Nanobioscience; Nanoscale devices; Probes; Scanning electron microscopy; Single electron devices; Tunneling;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1251335
