DocumentCode
399785
Title
High performance SiC diodes based on an efficient planar termination
Author
Brezeanu, G. ; Badila, M. ; Udrea, F. ; Millan, J. ; Godignon, P. ; Mihaila, A. ; Amaratunga, G. ; Brezeanu, M. ; Boianceanu, C.
Author_Institution
Univ. "Politchnica" of Bucharest, Romania
Volume
1
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
The paper addresses the state-of-art-in SiC power diodes. The best performance of Schottky barrier and junction barrier diodes on SiC is reviewed. The fundamental edge terminations used to relieve the crowding of the electric field of these devices are presented. An effective termination, based on the oxide ramp etching is described and the application of this method to SiC devices is discussed, achieving breakdown voltage of up to 95% from the ideally value.
Keywords
Schottky diodes; etching; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; Schottky barrier; SiC; breakdown voltage; efficient planar termination; fundamental edge terminations; high performance SiC diodes; junction barrier diodes; oxide ramp etching; power diodes; Etching; Frequency; Leakage current; Plasma temperature; Power system reliability; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1251339
Filename
1251339
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