Title :
High performance SiC diodes based on an efficient planar termination
Author :
Brezeanu, G. ; Badila, M. ; Udrea, F. ; Millan, J. ; Godignon, P. ; Mihaila, A. ; Amaratunga, G. ; Brezeanu, M. ; Boianceanu, C.
Author_Institution :
Univ. "Politchnica" of Bucharest, Romania
fDate :
28 Sept.-2 Oct. 2003
Abstract :
The paper addresses the state-of-art-in SiC power diodes. The best performance of Schottky barrier and junction barrier diodes on SiC is reviewed. The fundamental edge terminations used to relieve the crowding of the electric field of these devices are presented. An effective termination, based on the oxide ramp etching is described and the application of this method to SiC devices is discussed, achieving breakdown voltage of up to 95% from the ideally value.
Keywords :
Schottky diodes; etching; power semiconductor diodes; semiconductor device breakdown; silicon compounds; wide band gap semiconductors; Schottky barrier; SiC; breakdown voltage; efficient planar termination; fundamental edge terminations; high performance SiC diodes; junction barrier diodes; oxide ramp etching; power diodes; Etching; Frequency; Leakage current; Plasma temperature; Power system reliability; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Voltage;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1251339
