Nonequilibrium 1/f noise in platinum nanoparticle films

Author

Mihaila, M. ; Ursutiu, D. ; Grigoriu, C. ; Danila, M. ; Steriu, D. ; Raciunoiu, C.

Author_Institution

Nat. Inst. of Microtechnology, Bucharest, Romania

Volume

1

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

1/f noise spectra have been observed in platinum nanoparticle films deposited on SiO₂/Si substrates by laser ablation. Although all noise measurements were done in the linear region of the I-V characteristics, both equilibrium (ohmic) and nonequilibrium (nonohmic) behavior was observed in the dependence of the noise intensity on voltage (V). The nonequilibrium 1/f noise was found in some samples of smaller conductivity (small coverage). The sample with the smallest noise intensity features strong sublinear (V^0.2-0.37) nonequilibrium 1/f noise for voltages V<0.5V, while for V>0.5V the noise intensity is superlinear (V3.2). In the (20-300)K temperature range, the film resistance follows a T^-14/ dependence, specific to Mott´s phonon-assisted variable range hopping conduction.

Keywords

1/f noise; hopping conduction; metallic thin films; nanoparticles; platinum; pulsed laser deposition; 0.5 V; 20 to 300 K; I-V characteristics; Pt; Pt nanoparticle films; SiO₂-Si; SiO₂/Si substrates; equilibrium behavior; film resistance; laser ablation; linear region; noise intensity; nonequilibrium 1/f noise; nonequilibrium behavior; smaller conductivity; smallest noise intensity; strong sublinear nonequilibrium 1/f noise; variable range hopping conduction; Conductivity; Laser ablation; Laser noise; Noise measurement; Platinum; Semiconductor films; Substrates; Temperature dependence; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1251341

Filename

1251341