Title :
Novel technique for nanograin ultra-thin polysilicon film deposition and implantation
Author :
Ecoffey, S. ; Bouvet, D. ; Fazan, P. ; Tringe, J.W. ; Ionescu, A.M.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
28 Sept.-2 Oct. 2003
Abstract :
A new process for the fabrication of nanograin ultra-thin phosphorous-doped polysilicon film is presented. The process involves a two-step polysilicon Low Pressure Chemical Vapour Deposition (LPCVD) and a low energy "hot" implantation process at 500°C. With these techniques, we have carried out the deposition of layers of less than 10nm, which have shown resistivities around 1.cm. Systematic measurements carried out with 4-point probe configuration have been used to investigate the conduction in those films. We have observed charge trapping that induces hysteresis in the I-V characteristics.
Keywords :
CVD coatings; electrical resistivity; elemental semiconductors; ion implantation; nanostructured materials; phosphorus; semiconductor growth; semiconductor thin films; silicon; 10 nm; 4-point probe configuration; 500 degC; I-V characteristics; Si:P; charge trapping; hysteresis; low energy hot implantation; low pressure chemical vapour deposition; nanograin ultra-thin polysilicon film deposition; resistivities; Annealing; Chemical processes; Chemical technology; Crystallization; Fabrication; Grain size; Ion implantation; Laboratories; Temperature; Vehicles;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1251342
