Title :
AlN thin films obtained by pulsed laser deposition and reactive sputtering
Author :
Craciunoiu, F. ; Mihailescu, I.N. ; Ristoscu, C. ; Socol, G. ; Danila, M. ; Conache, G. ; Paun, V.
Author_Institution :
Nat. Inst. of Microtechnology, Bucharest, Romania
fDate :
28 Sept.-2 Oct. 2003
Abstract :
AlN thin films with thickness in nanometer range were prepared by pulsed laser deposition techniques and by reactive sputtering techniques. Investigations by XRD, SEM, AFM, and piezoelectric measurement were performed on the obtained AlN thin films. A comparison between some of the properties of the two types of films is presented.
Keywords :
III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; piezoelectric semiconductors; pulsed laser deposition; scanning electron microscopy; sputter deposition; wide band gap semiconductors; AFM; AlN; AlN thin films; SEM; XRD; piezoelectric measurement; pulsed laser deposition; reactive sputtering; Laser theory; Nitrogen; Optical pulses; Piezoelectric films; Plasma measurements; Pulsed laser deposition; Sputtering; Substrates; Surface emitting lasers; X-ray scattering;
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
DOI :
10.1109/SMICND.2003.1251349
