DocumentCode
399792
Title
AlN thin films obtained by pulsed laser deposition and reactive sputtering
Author
Craciunoiu, F. ; Mihailescu, I.N. ; Ristoscu, C. ; Socol, G. ; Danila, M. ; Conache, G. ; Paun, V.
Author_Institution
Nat. Inst. of Microtechnology, Bucharest, Romania
Volume
1
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
AlN thin films with thickness in nanometer range were prepared by pulsed laser deposition techniques and by reactive sputtering techniques. Investigations by XRD, SEM, AFM, and piezoelectric measurement were performed on the obtained AlN thin films. A comparison between some of the properties of the two types of films is presented.
Keywords
III-V semiconductors; X-ray diffraction; aluminium compounds; atomic force microscopy; piezoelectric semiconductors; pulsed laser deposition; scanning electron microscopy; sputter deposition; wide band gap semiconductors; AFM; AlN; AlN thin films; SEM; XRD; piezoelectric measurement; pulsed laser deposition; reactive sputtering; Laser theory; Nitrogen; Optical pulses; Piezoelectric films; Plasma measurements; Pulsed laser deposition; Sputtering; Substrates; Surface emitting lasers; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1251349
Filename
1251349
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