• DocumentCode
    399793
  • Title

    Electrical behavior of Si/SiO2 nanocomposite films

  • Author

    Iancu, V. ; Jdira, L. ; Draghic, M. ; Mitroi, M.R. ; Balberg, I. ; Ciurea, M.L.

  • Author_Institution
    Dept. of Phys., Univ. "Politchnica" of Bucharest, Romania
  • Volume
    1
  • fYear
    2003
  • fDate
    28 Sept.-2 Oct. 2003
  • Abstract
    Electrical behavior of Si/SiO2 nanocomposite films is studied. The samples preparation is presented. Current-voltage and current-temperature characteristics are analyzed in the frame of a conduction model. The agreement between the experimental data and the fit is excellent.
  • Keywords
    electrical conductivity; elemental semiconductors; nanocomposites; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; Si/SiO2 nanocomposite films; conduction model; current-temperature characteristics; current-voltage characteristics; electrical behavior; Annealing; Atmosphere; Conducting materials; Physics; Potential well; Semiconductor films; Silicon; Sputtering; Substrates; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2003. CAS 2003. International
  • Print_ISBN
    0-7803-7821-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2003.1251350
  • Filename
    1251350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=399793