DocumentCode :
399793
Title :
Electrical behavior of Si/SiO2 nanocomposite films
Author :
Iancu, V. ; Jdira, L. ; Draghic, M. ; Mitroi, M.R. ; Balberg, I. ; Ciurea, M.L.
Author_Institution :
Dept. of Phys., Univ. "Politchnica" of Bucharest, Romania
Volume :
1
fYear :
2003
fDate :
28 Sept.-2 Oct. 2003
Abstract :
Electrical behavior of Si/SiO2 nanocomposite films is studied. The samples preparation is presented. Current-voltage and current-temperature characteristics are analyzed in the frame of a conduction model. The agreement between the experimental data and the fit is excellent.
Keywords :
electrical conductivity; elemental semiconductors; nanocomposites; semiconductor-insulator boundaries; silicon; silicon compounds; Si-SiO2; Si/SiO2 nanocomposite films; conduction model; current-temperature characteristics; current-voltage characteristics; electrical behavior; Annealing; Atmosphere; Conducting materials; Physics; Potential well; Semiconductor films; Silicon; Sputtering; Substrates; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
Type :
conf
DOI :
10.1109/SMICND.2003.1251350
Filename :
1251350
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=399793
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