Cascaded band-stop MSW resonators on micromachined silicon membrane

Author

Sajin, G. ; Marcelli, R. ; Cismaru, A. ; Craciun, F.

Author_Institution

Nat. Res. & Dev. Inst. for Microtechnologies, Bucharest, Romania

Volume

1

fYear

2003

fDate

28 Sept.-2 Oct. 2003

Abstract

In this paper is presented a microwave tunable band-stop configuration based on a combination of two cascaded magnetostatic wave resonators, working at frequencies higher than 10 GHz. The structure has been obtained by coupling YIG film straight edge resonators (SER) excited by magnetostatic waves (MSW), coupled to a microstrip line on a micromachined silicon membrane. Measurements performed at different DC biasing magnetic fields demonstrate a tunability between 10 GHz and 17 GHz. The attenuation ranges between 20 dB and 25 dB at the central frequency domain (11-12 GHz and 13-16 GHz) and between 34 and 40 dB at the limits of the frequency domain (10-11 GHz... 16-17 GHz).

Keywords

band-stop filters; elemental semiconductors; garnets; magnetic thin film devices; magnetostatic wave devices; micromachining; micromechanical resonators; silicon; yttrium compounds; 10 GHz; 10 to 17 GHz; 11 to 12 GHz; 13 to 16 GHz; Si; YFe5O12; YIG; cascaded band-stop MSW resonators; cascaded magnetostatic wave resonators; coupling YIG film straight edge resonators; micromachined Si membrane; microwave tunable band-stop configuration; Biomembranes; Couplings; Frequency domain analysis; Magnetic field measurement; Magnetic films; Magnetostatic waves; Microstrip resonators; Resonant frequency; Semiconductor films; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2003. CAS 2003. International

Print_ISBN

0-7803-7821-0

Type

conf

DOI

10.1109/SMICND.2003.1251358

Filename

1251358