• DocumentCode
    399805
  • Title

    Persistent photoconductivity effect in amorphous As2Se3:Sn thin films

  • Author

    Vasiliev, LA ; Harea, D.V. ; Colomeico, E.P. ; Iovu, M.S.

  • Author_Institution
    Center of Optoelectronics, Chisinau, Moldova
  • Volume
    1
  • fYear
    2003
  • fDate
    28 Sept.-2 Oct. 2003
  • Abstract
    Persistent photoconductivity effects have been studied in amorphous As2Se3 films doped with Sn impurity using both transient and steady-state photocurrent measurements. From the photocurrent spectra the broad distributions of defect states in the band gap of As2Se3:Snx (x>0.5 at.% Sn) samples was evaluated. It was shown that these states contribute significantly to the persistent photoconductivity.
  • Keywords
    amorphous semiconductors; arsenic compounds; energy gap; photoconductivity; semiconductor thin films; tin; As2Se3:Snx; amorphous As2Se3:Sn thin films; band gap; broad distributions; defect states; persistent photoconductivity effect; steady-state photocurrent measurements; transient photocurrent measurements; Amorphous materials; Electrodes; Glass; Impurities; Lighting; Optical films; Photoconductivity; Steady-state; Tin; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 2003. CAS 2003. International
  • Print_ISBN
    0-7803-7821-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2003.1251364
  • Filename
    1251364
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=399805