DocumentCode :
399805
Title :
Persistent photoconductivity effect in amorphous As2Se3:Sn thin films
Author :
Vasiliev, LA ; Harea, D.V. ; Colomeico, E.P. ; Iovu, M.S.
Author_Institution :
Center of Optoelectronics, Chisinau, Moldova
Volume :
1
fYear :
2003
fDate :
28 Sept.-2 Oct. 2003
Abstract :
Persistent photoconductivity effects have been studied in amorphous As2Se3 films doped with Sn impurity using both transient and steady-state photocurrent measurements. From the photocurrent spectra the broad distributions of defect states in the band gap of As2Se3:Snx (x>0.5 at.% Sn) samples was evaluated. It was shown that these states contribute significantly to the persistent photoconductivity.
Keywords :
amorphous semiconductors; arsenic compounds; energy gap; photoconductivity; semiconductor thin films; tin; As2Se3:Snx; amorphous As2Se3:Sn thin films; band gap; broad distributions; defect states; persistent photoconductivity effect; steady-state photocurrent measurements; transient photocurrent measurements; Amorphous materials; Electrodes; Glass; Impurities; Lighting; Optical films; Photoconductivity; Steady-state; Tin; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN :
0-7803-7821-0
Type :
conf
DOI :
10.1109/SMICND.2003.1251364
Filename :
1251364
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=399805
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