DocumentCode
399814
Title
Modeling the suspended gate MOSFET used as voltage programmable switch
Author
Dobrescu, D. ; Dobrescu, L. ; Rusu, A. ; Ionescu, A.M.
Author_Institution
Politehnic Inst. of Bucharest, Romania
Volume
1
fYear
2003
fDate
28 Sept.-2 Oct. 2003
Abstract
This paper is a new approach to investigate and model the behaviour of the SGMOSFET with an external force applied on the mobile gate. Mechanical influences on the device threshold voltage VT are presented together with the advantages and the limitations of this operating regime of the SGMOSFET.
Keywords
MOSFET; semiconductor device models; SGMOSFET; suspended gate MOSFET; threshold voltage; voltage programmable switch; Capacitance; Capacitors; Electronic mail; Force control; MOSFET circuits; Mathematical model; Pressure control; Springs; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2003. CAS 2003. International
Print_ISBN
0-7803-7821-0
Type
conf
DOI
10.1109/SMICND.2003.1251379
Filename
1251379
Link To Document