GaAsSb-(In)GaAsN type-II quantum-well lasers on GaAs substrate

Author

Tansu, Nelson ; Mawst, Luke J. ; Vurgaftman, Igor ; Meyer, Jerry R.

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

37

Abstract

This paper presents GaAsSb-GaAsN and GaAsSb-InGaAsN type-II QW structures on GaAs substrate as laser materials that would achieve emission at 1550 nm and beyond. The envisioned GaAsSb-(In)GaAsN type-II QW edge-emitters and VCSELs with dilute-nitride "W" active regions may be expected to display significant practical advantage over InP-based structures. These device structures represent a competitive alternative approach in achieving a high-performance GaAs-based 1550-nm diode laser technology.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; quantum well lasers; surface emitting lasers; 1550 nm; GaAs; GaAs substrate; GaAsSb-GaAsN; GaAsSb-InGaAsN; laser emission; laser materials; type-II QW edge-emitters; type-II quantum-well lasers; Charge carrier density; Current density; Drives; Electrons; Gallium arsenide; High speed optical techniques; Optical computing; Optical sensors; Photonics; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251588

Filename

1251588