Temperature sensitivity of 1360 nm InGaAsN quantum well lasers

Author

Yeh, Jeng-Ya ; Tansu, Nelson ; Mawst, Luke J.

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

1

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

41

Abstract

This study demonstrated that the nitrogen content in the quantum well (QW) dramatically affects the temperature sensitivity of current injection efficiency and material gain parameter. The current injection efficiency of InGaAsN QW lasers with increasing N-content exhibits increasing temperature sensitivity, which could result from the reduction of the heavy hole confinement. Suppression of thermionic carrier leakage is crucial to realizing high-performance InGaAsN QW lasers with high N-content for emission wavelength beyond 1360-nm or even up to 1550-nm.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; nitrogen; quantum well lasers; thermo-optical effects; 1360 nm; InGaAsN; current injection efficiency; heavy hole confinement; material gain parameter; nitrogen; quantum well; quantum well lasers; temperature sensitivity; thermionic carrier leakage; Current density; Electrons; Heat sinks; Indium gallium arsenide; Nitrogen; Optical materials; Quantum well lasers; Radiative recombination; Temperature sensors; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1251590

Filename

1251590