Title :
Temperature sensitivity of 1360 nm InGaAsN quantum well lasers
Author :
Yeh, Jeng-Ya ; Tansu, Nelson ; Mawst, Luke J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
This study demonstrated that the nitrogen content in the quantum well (QW) dramatically affects the temperature sensitivity of current injection efficiency and material gain parameter. The current injection efficiency of InGaAsN QW lasers with increasing N-content exhibits increasing temperature sensitivity, which could result from the reduction of the heavy hole confinement. Suppression of thermionic carrier leakage is crucial to realizing high-performance InGaAsN QW lasers with high N-content for emission wavelength beyond 1360-nm or even up to 1550-nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; nitrogen; quantum well lasers; thermo-optical effects; 1360 nm; InGaAsN; current injection efficiency; heavy hole confinement; material gain parameter; nitrogen; quantum well; quantum well lasers; temperature sensitivity; thermionic carrier leakage; Current density; Electrons; Heat sinks; Indium gallium arsenide; Nitrogen; Optical materials; Quantum well lasers; Radiative recombination; Temperature sensors; Thermionic emission;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1251590
